Wei Sun Leong, Haozhe Wang, Jingjie Yeo, Francisco J. Martin-Martinez, Ahmad Zubair, Pin-Chun Shen, Yunwei Mao, Tomas Palacios, Markus J. Buehler, Jin-Yong Hong, & Jing Kong
DOI: 10.1038/s41467-019–08813‑x
Abstract:
The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm² V−1 s−1 ; electron mobility = 7438 cm² V−1 s−1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.